diode rapidswitchingemittercontrolleddiode IDP30E65D1 emittercontrolleddioderapid1series datasheet industrialpowercontrol
2 IDP30E65D1 emittercontrolleddioderapid1series rev.2.1,2014-09-18 rapidswitchingemittercontrolleddiode features: ?650vemittercontrolledtechnology ?temperaturestablebehaviourofkeyparameters ?lowforwardvoltage( v f ) ?ultrafastrecovery ?lowreverserecoverycharge( q rr ) ?lowreverserecoverycurrent( i rrm ) ?175cjunctionoperatingtemperature ?pb-freeleadplating;rohscompliant applications: ?ac/dcconverters ?boostdiodeinpfcstages ?freewheelingdiodesininvertersandmotordrives ?generalpurposeinverters ?switchmodepowersupplies keyperformanceandpackageparameters type v rrm i f v f , t vj =25c t vjmax marking package IDP30E65D1 650v 30a 1.35v 175c e30ed1 pg-to220-2-1 a c c a c
3 IDP30E65D1 emittercontrolleddioderapid1series rev.2.1,2014-09-18 tableofcontents description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 thermal resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 package drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 a c c a c
4 IDP30E65D1 emittercontrolleddioderapid1series rev.2.1,2014-09-18 maximumratings foroptimumlifetimeandreliability,infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. parameter symbol value unit repetitivepeakreversevoltage, t vj 3 25c v rrm 650 v diodeforwardcurrent,limitedby t vjmax t c =25c t c =100c i f 60.0 30.0 a diodepulsedcurrent, t p limitedby t vjmax i fpuls 90.0 a diode surge non repetitive forward current t c =25c, t p =10.0ms,sinehalfwave i fsm 180.0 a powerdissipation t c =25c p tot 143.0 w operating junction temperature t vj -40...+175 c storage temperature t stg -55...+150 c soldering temperature, wave soldering 1.6 mm (0.063 in.) from case for 10s 260 c mounting torque, m3 screw maximum of mounting processes: 3 m 0.6 nm thermalresistance parameter symbol conditions max.value unit characteristic diode thermal resistance, 1) junction - case r th(j-c) 1.05 k/w thermal resistance junction - ambient r th(j-a) 62 k/w electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit staticcharacteristic diode forward voltage v f i f =30.0a t vj =25c t vj =125c t vj =175c - - - 1.35 1.30 1.26 1.70 - - v reverse leakage current i r v r =650v t vj =25c t vj =175c - - 4.0 800.0 40.0 - a electricalcharacteristic,at t vj =25c,unlessotherwisespecified value min. typ. max. parameter symbol conditions unit dynamiccharacteristic internal emitter inductance measured 5mm (0.197 in.) from case l e - 7.0 - nh 1) please be aware that in non standard load conditions, due to high rth(j-c), tvj close to tvjmax can be reached. a c c a c
5 IDP30E65D1 emittercontrolleddioderapid1series rev.2.1,2014-09-18 switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit diodecharacteristic,at t vj =25c diode reverse recovery time t rr - 64 - ns diode reverse recovery charge q rr - 0.67 - c diode peak reverse recovery current i rrm - 16.0 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -1250 - a/s t vj =25c, v r =400v, i f =30.0a, di f /dt =1000a/s, l s =30nh, c s =40pf, switch ikw50n65h5 diode reverse recovery time t rr - 95 - ns diode reverse recovery charge q rr - 0.51 - c diode peak reverse recovery current i rrm - 7.0 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -600 - a/s t vj =25c, v r =400v, i f =30.0a, di f /dt =300a/s, l s =30nh, c s =40pf, switch ikw50n65h5 switchingcharacteristic,inductiveload value min. typ. max. parameter symbol conditions unit diodecharacteristic,at t vj =175c/125c diode reverse recovery time t rr - 103 - ns diode reverse recovery charge q rr - 1.41 - c diode peak reverse recovery current i rrm - 23.0 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -1150 - a/s t vj =175c, v r =400v, i f =30.0a, di f /dt =1000a/s, l s =30nh, c s =40pf, switch ikw50n65h5 diode reverse recovery time t rr - 129 - ns diode reverse recovery charge q rr - 0.92 - c diode peak reverse recovery current i rrm - 10.3 - a diode peak rate of fall of reverse recoverycurrentduring t b di rr /dt - -580 - a/s t vj =125c, v r =400v, i f =30.0a, di f /dt =300a/s, l s =30nh, c s =40pf, switch ikw50n65h5 a c c a c
6 IDP30E65D1 emittercontrolleddioderapid1series rev.2.1,2014-09-18 figure 1. powerdissipationasafunctionofcase temperature ( t vj 175c) t c ,casetemperature[c] p tot ,powerdissipation[w] 25 50 75 100 125 150 175 0 25 50 75 100 125 150 figure 2. diodetransientthermalimpedanceasa functionofpulsewidth ( d = t p /t) t p ,pulsewidth[s] z th(j - c) ,transientthermalresistance[k/w] 1e-6 1e-5 1e-4 0.001 0.01 0.1 0.01 0.1 1 d=0.5 0.2 0.1 0.05 0.02 0.01 single pulse i: r i [k/w]: t i [s]: 1 0.018165 2.6e-5 2 0.260192 1.8e-4 3 0.287872 1.4e-3 4 0.461564 6.0e-3 5 0.023701 0.096993 6 1.6e-3 2.0799 figure 3. typicalreverserecoverytimeasafunctionof diodecurrentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] t rr ,reverserecoverytime[ns] 200 600 1000 1400 1800 2200 2600 3000 0 20 40 60 80 100 120 140 160 180 t j =25c, i f = 30a t j =175c, i f = 30a figure 4. typicalreverserecoverychargeasafunction ofdiodecurrentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] q rr ,reverserecoverycharge[c] 200 600 1000 1400 1800 2200 2600 3000 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 t j =25c, i f = 30a t j =175c, i f = 30a a c c a c
7 IDP30E65D1 emittercontrolleddioderapid1series rev.2.1,2014-09-18 figure 5. typicalpeakreverserecoverycurrentasa functionofdiodecurrentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] i rrm ,reverserecoverycurrent[a] 0 1000 2000 3000 4000 5000 0 5 10 15 20 25 30 35 40 45 50 t j =25c, i f = 30a t j =175c, i f = 30a figure 6. typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope ( v r =400v) di f /dt ,diodecurrentslope[a/s] di rr /dt ,diodepeakrateoffallof i rr [a/s] 200 600 1000 1400 1800 2200 2600 3000 -2000 -1800 -1600 -1400 -1200 -1000 -800 -600 -400 -200 0 t j =25c, i f = 30a t j =175c, i f = 30a figure 7. typicaldiodeforwardcurrentasafunctionof forwardvoltage v f ,forwardvoltage[v] i f ,forwardcurrent[a] 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 0 10 20 30 40 50 60 t j =25c t j =175c figure 8. typicaldiodeforwardvoltageasafunctionof junctiontemperature t vj ,junctiontemperature[c] v f ,forwardvoltage[v] 0 25 50 75 100 125 150 175 0.50 0.75 1.00 1.25 1.50 1.75 2.00 i f =15a i f =30a i f =60a a c c a c
8 IDP30E65D1 emittercontrolleddioderapid1series rev.2.1,2014-09-18 a c c a c pg-to220-2-1
9 IDP30E65D1 emittercontrolleddioderapid1series rev.2.1,2014-09-18 a c c a c pg-to220-2-1 t a a b b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% v ge 10% i c t 90% v ge v ge (t) t t i c (t) v ce (t) 90% v ge v ge (t) t t i c (t) v ce (t) t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3 e t t v i t off = x x d 1 2 ce c e t t v i t on = x x d 3 4 ce c cc
10 IDP30E65D1 emitter controlled diode rapid 1 series rev. 2.1, 2014-09-18 revision history IDP30E65D1 previous revision revision date subjects (major changes since last revision) 2.1 2014-09-18 final data sheet a c c a c pg-to220-2-1 t a a b b t d(off) t f t r t d(on) 90% i c 10% i c 90% i c 10% v ge 10% i c t 90% v ge v ge (t) t t i c (t) v ce (t) 90% v ge v ge (t) t t i c (t) v ce (t) t t 1 t 4 2% i c 10% v ge 2% v ce t 2 t 3 e t t v i t off = x x d 1 2 ce c e t t v i t on = x x d 3 4 ce c cc
|
